RJP6085DPK Datasheet, PDF (1/6 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJP6085DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
• High speed switching
• Low collector to emitter saturation voltage
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
1
2
3
G
E
REJ03G1862-0100
Rev.1.00
Nov 09, 2009
1. Gate
2. Collecotor
3. Emitter
4. Collector (Flange)
Absolute Maximum Ratings
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25°C
Symbol
V_CES
V_GES
I_C
I_C(peak) ^Note1
P_C ^Note2
θj-c ^Note2
Tj
Tstg
Ratings
600
±30
40
80
178.5
0.7
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/W
°C
°C
REJ03G1862-0100 Rev.1.00 Nov 09, 2009
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