RJP6065DPM_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJP6065DPM
Silicon N Channel IGBT
High Speed Power Switching
Features
 Low collector to emitter saturation voltage
V_CE(sat) = 1.8 V typ. (I_C = 40 A, V_GE = 15V, Ta = 25°C)
 Gate to emitter voltage rating 30 V
 Pb-free lead plating and chip bonding
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
G
1
2
3
Absolute Maximum Ratings
Item
Symbol
Collector to emitter voltage
V_CES
Gate to emitter voltage
Collector current
Collector peak current
V_GES
Ic ^Note1
ic(peak) ^Note1
Collector dissipation
P_C
Junction to case thermal impedance
j-c
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area
Preliminary Datasheet
R07DS0204EJ0100
Rev.1.00
Nov 19, 2010
C
1. Gate
2. Collector
3. Emitter
E
Ratings
630
±30
40
100
50
2.5
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
W
°C/W
°C
°C
R07DS0204EJ0100 Rev.1.00
Nov 19, 2010
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