RJP30H1DPP-M0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High speed power switching

RJP30H1DPP-M0
Silicon N Channel IGBT
High speed power switching
Features
 Trench gate and thin wafer technology (G6H-II series)
 High speed switching: t_r =80 ns typ., t_f = 150 ns typ.
 Low collector to emitter saturation voltage: V_CE(sat)= 1.5 V typ.
 Low leak current: I_CES = 1 A max.
 Isolated package TO-220FL
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
G
1
23
Preliminary Datasheet
R07DS0466EJ0200
Rev.2.00
Jun 15, 2011
C
1. Gate
2. Collector
3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Tc = 25C
Symbol
V_CES
V_GES
I_C
ic(peak) ^Note1
P_C ^Note2
j-c
Tj
Tstg
Ratings
360
±30
30
200
20
6.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/W
°C
°C
R07DS0466EJ0200 Rev.2.00
Jun 15, 2011
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