RJP30H1DPD Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High speed power switching

RJP30H1DPD
Silicon N Channel IGBT
High speed power switching
Features
 Trench gate and thin wafer technology (G6H-II series)
 High speed switching: t_r = 80 ns typ., t_f = 150 ns typ.
 Low collector to emitter saturation voltage: V_CE(sat) = 1.5 V typ.
 Low leak current: I_CES = 1 A max.
Outline
RENESAS Package code: PRSS0004ZJ-A
(Package name : TO-252)
C
4
12 ₃
G
E
Preliminary Datasheet
R07DS0465EJ0200
Rev.2.00
Jun 15, 2011
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Tc = 25C
Symbol
V_CES
V_GES
I_C
ic(peak) ^Note1
P_C ^Note2
j-c
Tj
Tstg
Ratings
360
±30
30
200
40
3.13
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
W
°C/W
°C
°C
R07DS0465EJ0200 Rev.2.00
Jun 15, 2011
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