RJP30E3DPP-M0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJP30E3DPP-M0
Silicon N Channel IGBT
High Speed Power Switching
Features
• Trench gate technology (G5H series)
• Low collector to emitter saturation voltage V_CE(sat) = 1.6 V typ
• High speed switching tf = 150 ns typ
• Low leak current I_CES = 1 μA max
• Isolated package TO-220FL
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
G
1
23
Preliminary Datasheet
R07DS0353EJ0200
Rev.2.00
Apr 15, 2011
C
1. Gate
2. Collector
3. Emitter
E
Absolute Maximum Ratings
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Tc = 25°C
Symbol
V_CES
V_GES
I_C
ic(peak) ^Note1
P_C ^Note2
θj-c
Tj
Tstg
Ratings
360
±30
40
250
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/ W
°C
°C
R07DS0353EJ0200 Rev.2.00
Apr 15, 2011
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