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RJP30E2DPK-M0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching | |||
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RJP30E2DPK-M0
Silicon N Channel IGBT
High Speed Power Switching
Features
⢠Trench gate technology (G5H series)
⢠Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
⢠High speed switching tf = 150 ns typ
⢠Low leak current ICES = 1 μA max
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name: TO-3PSG)
4
G
1
23
Preliminary Datasheet
R07DS0348EJ0100
Rev.1.00
Apr 12, 2011
C
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW ⤠10 μs, duty cycle ⤠1%
2. Tc = 25°C
Symbol
VCES
VGES
Ic
ic(peak) Note1
PC Note2
θj-c
Tj
Tstg
Ratings
360
±30
35
200
50
2.5
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/ W
°C
°C
R07DS0348EJ0100 Rev.1.00
Apr 12, 2011
Page 1 of 6
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