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| RJP1CS28DWA Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Inverter | |||
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Preliminary Datasheet
RJP1CS28DWA / RJP1CS28DWS
1250V - 200A - IGBT
Application: Inverter
R07DS1306EJ0100
Rev.1.00
Sep 30, 2015
Features
ï· Renesas generation 7th Trench IGBT
ï· Low collector to emitter saturation voltage
VCE(sat) = 1.55 V typ. (at IC = 200 A, VGE = 15 V, Tc = 25ï°C)
ï· Moderate speed switching
ï· Short circuit withstands time (10 ïs min.)
Outline
Die
Wafer
2
C
3
2
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
3
1
3
3
Absolute Maximum Ratings
( Tc = 25°C unless otherwise noted )
Item
Symbol
Ratings
Unit
Collector to emitter voltage
VCES
1250
V
Gate to emitter voltage
VGES
±30
V
Collector current
Tc = 25°C
IC
400
A
Junction temperature
Tc = 100°C
IC
200
A
Tj
175 Note1
ï°C
Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175ï°C.
IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175ï°C.
R07DS1306EJ0100 Rev.1.00
Sep 30, 2015
Page 1 of 3
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