RJP1CS08DWT_15 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 1250V - 200A - IGBT Application: Inverter

RJP1CS08DWT / RJP1CS08DWA
1250V - 200A - IGBT
Application: Inverter
Features
• Low collector to emitter saturation voltage
V_CE(sat) = 1.8 V typ. (at I_C = 200 A, V_GE = 15 V, Tc = 25°C)
• High speed switching
• Short circuit withstands time (10 μs min.)
Outline
Datasheet
R07DS0831EJ0300
Rev.3.00
Oct 20, 2014
2
C
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
Die: RJP1CS08DWT-80
3
3
1
3
3
Wafer: RJP1CS08DWA-80
2
Absolute Maximum Ratings
(Tc = 25°C unless otherwise noted)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
V_CES
V_GES
I_C
I_C
Tj
1250
V
±30
V
400
A
200
A
175 ^Note1
°C
Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175°C.
IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175°C.
R07DS0831EJ0300 Rev.3.00
Oct 20, 2014
Page 1 of 3