RJP1CS06DWT Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 1250V - 100A - IGBT Application: Inverter

Preliminary Datasheet
RJP1CS06DWT/RJP1CS06DWA
1250V - 100A - IGBT
Application: Inverter
R07DS0829EJ0100
Rev.1.00
Jan 23, 2013
Features
 Low collector to emitter saturation voltage
V_CE(sat) = 1.8 V typ. (at I_C = 100 A, V_GE = 15 V, Ta = 25C)
 High speed switching
 Short circuit withstands time (10 s min.)
Outline
2
C
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
Die: RJP1CS06DWT-80
3
1
3
3
Wafer: RJP1CS06DWA-80
2
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
Symbol
V_CES
V_GES
I_C
I_C
Tj
Ratings
1250
±30
200
100
150
(Ta = 25°C)
Unit
V
V
A
A
C
R07DS0829EJ0100 Rev.1.00
Jan 23, 2013
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