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RJP1CS05DWT Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 1250V - 75A - IGBT Application: Inverter | |||
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Preliminary Datasheet
RJP1CS05DWT/RJP1CS05DWA
1250V - 75A - IGBT
Application: Inverter
R07DS0828EJ0100
Rev.1.00
Jan 23, 2013
Features
ï· Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25ï°C)
ï· High speed switching
ï· Short circuit withstands time (10 ïs min.)
Outline
2
C
1G
E
1. Gate
3
2. Collector (The back)
3. Emitter
Die: RJP1CS05DWT-80
3
1
3
3
Wafer: RJP1CS05DWA-80
2
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
Symbol
VCES
VGES
IC
IC
Tj
Ratings
1250
±30
150
75
150
(Ta = 25°C)
Unit
V
V
A
A
ï°C
R07DS0828EJ0100 Rev.1.00
Jan 23, 2013
Page 1 of 3
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