RJM0306JSP_15 Datasheet, PDF (1/12 Pages) Renesas Technology Corp – Silicon N / P Channel Power MOS FET High Speed Power Switching

Preliminary Datasheet
RJM0306JSP
Silicon N / P Channel Power MOS FET
High Speed Power Switching
REJ03G1571-0101
Rev.1.01
May 28, 2010
Features
 Two elements each of N and P channels are incorporated (suitable for H-bridge circuit)
 High density mounting
 Low on-resistance
 Capable of 4 V gate drive
 High temperature D-S leakage guarantee
Avalanche rating
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
S7
87 ⁶⁵
1 ²³⁴
MOS4
Pch
8G
2G
MOS1
Nch
6G
D1
4G
S3
MOS3
Pch
D5
MOS2
Nch
Pin No.
1
2
3
4
5
6
7
8
Element
MOS1 (Nch)
MOS4 (Pch)
MOS1 (Nch)
MOS1 (Nch)
MOS2 (Nch)
MOS2 (Nch)
MOS2 (Nch)
MOS3 (Pch)
MOS3 (Pch)
MOS3 (Pch)
MOS4 (Pch)
MOS4 (Pch)
Electrode
Drain
Gate
Source
Gate
Drain
Gate
Source
Gate
Absolute Maximum Ratings
Item
Symbol
Value
MOS1, 2 (Nch) MOS3, 4 (Pch)
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
V_DSS
V_GSS
I_D
I_D (pulse)^{Note 1}
I_APNote ⁴
E_ARNote ⁴
Pch^{Note 2}
Pch^{Note 3}
30
–30
20
20
3.5
–3.5
28
–28
3.5
–3.5
1.22
1.22
1.5
2.2
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW  10 s, duty cycle  1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40  40  1.6 mm), PW  10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40  40  1.6 mm), PW  10 s
4. Value at Tch = 25C, Rg  50 
(Ta = 25°C)
Unit
V
V
A
A
A
mJ
W
W
C
C
REJ03G1571-0101 Rev.1.01
May 28, 2010
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