RJM0306JSP Datasheet, PDF (1/13 Pages) Renesas Technology Corp – Silicon N Channel MOSFET High Speed Power Switching

RJM0306JSP
Silicon N / P Channel Power MOS FET
High Speed Power Switching
Features
• Two elements each of N and P channels are incorporated (suitable for H-bridge circuit)
• High density mounting
• Low on-resistance
• Capable of 4 V gate drive
• High temperature D-S leakage guarantee
Avalanche rating
Outline
REJ03G1571-0100
Rev.1.00
Nov 16, 2007
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
S7
87 ⁶⁵
1 ²³⁴
MOS4
Pch
8G
6G
D1
2G
MOS1
Nch
4G
S3
MOS3
Pch
D5
MOS2
Nch
Pin No.
1
2
3
4
5
6
7
8
Element
MOS1 (Nch)
MOS4 (Pch)
MOS1 (Nch)
MOS1 (Nch)
MOS2 (Nch)
MOS2 (Nch)
MOS2 (Nch)
MOS3 (Pch)
MOS3 (Pch)
MOS3 (Pch)
MOS4 (Pch)
MOS4 (Pch)
Electrode
Drain
Gate
Source
Gate
Drain
Gate
Source
Gate
REJ03G1571-0100 Rev.1.00 Nov 16, 2007
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