RJL60S5DPK-M0 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 600V - 20A - SJ MOS FET High Speed Power Switching

RJL60S5DPK-M0
600V - 20A - SJ MOS FET
High Speed Power Switching
Preliminary Datasheet
R07DS0818EJ0002
Rev.0.02
Jun 21, 2012
Features
 Superjunction MOSFET
 Built-in fast recovery diode
 Low on-resistance
R_DS(on) = 0.150  typ. (at I_D = 10 A, V_GS = 10 V, Ta = 25C)
 High speed switching
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name:TO-3PSG)
D
12 ₃
G
S
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
Symbol
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_DR
I_DR
Note1
(pulse)
Pch ^Note2
ch-c
Tch
Tstg
Ratings
600
(+30), (20)
20
40
20
40
192.3
0.65
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
C/W
C
C
R07DS0818EJ0002 Rev.0.02
Jun 21, 2012
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