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| RJL6014DPP Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching | |||
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RJL6014DPP
Silicon N Channel MOS FET
High Speed Power Switching
Preliminary Datasheet
R07DS0262EJ0200
(Previous: REJ03G1853-0100)
Rev.2.00
Mar 01, 2011
Features
ï· Built-in fast recovery diode
trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/ïs, Ta = 25 ï°C)
ï· Low on-resistance
RDS(on) = 0.52 ï typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 ï°C)
ï· Low leakage current
ï· High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
D
1
23
G
S
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
IDNote4
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
ï±ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tc = 25ï°C
3. STch = 25ï°C, Tch ï£ 150ï°C
4. Limited by maximum safe operation area
Ratings
600
ï±30
15
45
15
45
4
0.87
35
3.57
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
R07DS0262EJ0200 Rev.2.00
Mar 01, 2011
Page 1 of 6
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