RJL6013DPE_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJL6013DPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
 Built-in fast recovery diode
 Low on-resistance
R_DS(on) = 0.66  typ. (at I_D = 5.5 A, V_GS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name LDPAK(S)-(1))
4
1
G
2
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
Symbol
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_DR
I_DR
Note1
(pulse)
I_APNote3
E_ARNote3
Pch ^Note2
ch-c
Tch
Tstg
Preliminary Datasheet
R07DS0437EJ0200
(Previous: REJ03G1748-0100)
Rev.2.00
Jun 16, 2011
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
600
30
11
33
11
33
4
0.87
100
1.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0437EJ0200 Rev.2.00
Jun 16, 2011
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