RJL6012DPE_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 600V - 10A - MOS FET High Speed Power Switching

RJL6012DPE
600V - 10A - MOS FET
High Speed Power Switching
Features
 Built-in fast recovery diode
 Low on-resistance
R_DS(on) = 0.88  typ. (at I_D = 5 A, V_GS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
Symbol
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_DR
I_DR
Note1
(pulse)
I_APNote3
E_ARNote3
Pch ^Note2
ch-c
Tch
Tstg
Preliminary Datasheet
R07DS0814EJ0200
(Previous: REJ03G1750-0100)
Rev.2.00
Jun 21, 2012
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
600
30
10
30
10
30
3
0.49
100
1.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0814EJ0200 Rev.2.00
Jun 21, 2012
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