RJL5032DPP-M0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJL5032DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-state resistance
R_DS(on) = 2.2 Ω typ. (at I_D = 1.5 A, V_GS = 10 V, Ta = 25°C)
• High speed switching
• Built in fast recovery diode
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
G
1
23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Channel dissipation
V_DSS
V_GSS
I_D
I_{D (pulse)} ^Note1
I_APNote3
Pch ^{Note 2}
Channel to case thermal Impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Preliminary Datasheet
R07DS0251EJ0100
Rev.1.00
May 23, 2011
D
1. Gate
2. Drain
3. Source
S
Value
500
±30
3
12
3
30.6
4.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
R07DS0251EJ0100 Rev.1.00
May 23, 2011
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