RJK60S7DPP-E0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 600V -30A - SJ MOS FET High Speed Power Switching

Preliminary Datasheet
RJK60S7DPP-E0
600V -30A - SJ MOS FET
High Speed Power Switching
R07DS0643EJ0100
Rev.1.00
Apr 23, 2012
Features
 Superjunction MOSFET
 Low on-resistance
R_DS(on) = 0.100  typ. (at I_D = 15 A, V_GS = 10 V, Ta = 25C)
 High speed switching
tf = 15 ns typ. (at I_D = 15 A, V_GS = 10 V, R_L = 20 , Rg = 10 , Ta = 25C)
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
D
1. Gate
G
2. Drain
3. Source
1
23
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
Symbol
V_DSS
V_GSS
I_D ^Note1
I_D ^Note1
I_D
Note1
(pulse)
I_DR ^Note1
I_{DR (pulse)} ^Note1
I_APNote3
E_ARNote3
Pch ^Note2
ch-c
Tch
Tstg
Ratings
600
+30, 20
30
19
60
30
60
7.5
3.05
34.7
3.6
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0643EJ0100Rev.1.00
Apr 23, 2012
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