RJK60S5DPQ-E0 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 600V - 20A - SJ MOS FET High Speed Power Switching

RJK60S5DPQ-E0
600V - 20A - SJ MOS FET
High Speed Power Switching
Preliminary Datasheet
R07DS0734EJ0100
Rev.1.00
Apr 23, 2012
Features
• Superjunction MOSFET
• Low on-resistance
R_DS(on) = 0.150 Ω typ. (at I_D = 10 A, V_GS = 10 V, Ta = 25°C)
• High speed switching
t_f = 23 ns typ. (at I_D = 10 A, V_GS = 10 V, R_L = 30 Ω, Rg = 10 Ω, Ta = 25°C)
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
D
4
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25°C
Tc = 100°C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
V_DSS
V_GSS
I_D)Note1
I_D)Note1
I_D
Note1
(pulse)
I_DR ^Note1
I_{DR (pulse)} ^Note1
I_APNote3
E_ARNote3
Pch ^Note2
θch-c
Tch
Tstg
Ratings
600
+30, −20
20
12.6
40
20
40
5
1.36
192.3
0.65
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS0734EJ0100 Rev.1.00
Apr 23, 2012
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