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| RJK60S5DPP-E0_13 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 600V - 20A - SJ MOS FET High Speed Power Switching | |||
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Preliminary Datasheet
RJK60S5DPP-E0
600V - 20A - SJ MOS FET
High Speed Power Switching
R07DS0641EJ0300
Rev.3.00
Jan 23, 2013
Features
ï· Superjunction MOSFET
ï· Low on-resistance
RDS(on) = 0.150 ï typ. (at ID = 10 A, VGS = 10 V, Ta = 25ï°C)
ï· High speed switching
tf = 23 ns typ. (at ID = 10 A, VGS = 10 V, RL = 30 ï, Rg = 10 ï, Ta = 25ï°C)
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
D
1. Gate
G
2. Drain
3. Source
1
23
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25ï°C
Tc = 100ï°C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
MOSFET dv/dt ruggedness
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. STch = 25ï°C, Tch ï£ 150ï°C
3. Value at Tj = 25ï°C, VDS ï£ 480 V
4. Value at Tc = 25ï°C
Symbol
VDSS
VGSS
IDNote1
IDNote1
ID
Note1
(pulse)
IDR Note1
IDR (pulse) Note1
IAPNote2
EARNote2
dv/dt Note3
Pch Note4
ï±ch-c
Tch
Tstg
Ratings
600
+30, ï20
20
12.6
40
20
40
5
1.36
150
33.7
3.7
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
A
mJ
V/ns
W
ï°C/W
ï°C
ï°C
R07DS0641EJ0300 Rev.3.00
Jan 23, 2013
Page 1 of 7
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