 English |
|
|
|
|
|
|
|
| RJK60S5DPK-M0_13 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 600V - 20A - SJ MOS FET High Speed Power Switching | |||
| |||
|
Preliminary Datasheet
RJK60S5DPK-M0
600V - 20A - SJ MOS FET
High Speed Power Switching
R07DS0245EJ0500
Rev.5.00
Jan 23, 2013
Features
ï· Superjunction MOSFET
ï· Low on-resistance
RDS(on) = 0.150 ï typ. (at ID = 10 A, VGS = 10 V, Ta = 25ï°C)
ï· High speed switching
tf = 23 ns typ. (at ID = 10 A, VGS = 10 V, RL = 30 ï, Rg = 10 ï, Ta = 25ï°C)
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name:TO-3PSG)
D
4
12 3
G
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25ï°C
Tc = 100ï°C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
MOSFET dv/dt ruggedness
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. STch = 25ï°C, Tch ï£ 150ï°C
3. Value at Tj = 25ï°C, VDS ï£ 480 V
4. Value at Tc = 25ï°C
Symbol
VDSS
VGSS
ID)Note1
ID)Note1
ID
Note1
(pulse)
IDR Note1
IDR (pulse) Note1
IAPNote2
EARNote2
dv/dt Note3
Pch Note4
ï±ch-c
Tch
Tstg
Ratings
600
+30, ï20
20
12.6
40
20
40
5
1.36
150
192.3
0.65
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
A
mJ
V/ns
W
ï°C/W
ï°C
ï°C
R07DS0245EJ0500 Rev.5.00
Jan 23, 2013
Page 1 of 7
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese