RJK60S4DPE Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 600V - 16A - SJ MOS FET High Speed Power Switching

Preliminary Datasheet
RJK60S4DPE
600V - 16A - SJ MOS FET
High Speed Power Switching
R07DS0733EJ0100
Rev.1.00
Apr 23, 2012
Features
• Superjunction MOSFET
• Low on-resistance
R_DS(on) = 0.23 Ω typ. (at I_D = 8 A, V_GS = 10 V, Ta = 25°C)
• High speed switching
t_f = 21 ns typ. (at I_D = 8 A, V_GS = 10 V, R_L = 37.5 Ω, Rg = 10 Ω, Ta = 25°C)
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
D
4
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25°C
Tc = 100°C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D ^Note1
I_D ^Note1
I_D
Note1
(pulse)
I_DR ^Note1
I_{DR (pulse)} ^Note1
Pch ^Note2
θch-c
Tch
Tstg
Ratings
600
+30, −20
16
10.1
32
16
32
104.1
1.2
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
R07DS0733EJ0100 Rev.1.00
Apr 23, 2012
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