 English |
|
|
|
|
|
|
|
| RJK60S3DPP-E0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 600V - 12A - SJ MOS FET High Speed Power Switching | |||
| |||
|
Preliminary Datasheet
RJK60S3DPP-E0
600V - 12A - SJ MOS FET
High Speed Power Switching
R07DS0637EJ0100
Rev.1.00
Apr 23, 2012
Features
ï· Superjunction MOSFET
ï· Low on-resistance
RDS(on) = 0.35 ï typ. (at ID = 6 A, VGS = 10 V, Ta = 25ï°C)
ï· High speed switching
tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50 ï, Rg = 10 ï, Ta = 25ï°C
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
D
1. Gate
G
2. Drain
3. Source
1
23
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25ï°C
Tc = 100ï°C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Value at Tc = 25ï°C
Symbol
VDSS
VGSS
ID Note1
ID Note1
ID
Note1
(pulse)
IDR Note1
IDR
Note1
(pulse)
Pch Note2
ï±ch-c
Tch
Tstg
Ratings
600
+30, ï20
12.0
7.6
24
12
24
27.7
4.5
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
ï°C/W
ï°C
ï°C
R07DS0637EJ0100 Rev.1.00
Apr 23, 2012
Page 1 of 6
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese