 English |
|
|
|
|
|
|
|
| RJK60S3DPE Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 600V - 12A - SJ MOS FET High Speed Power Switching | |||
| |||
|
Preliminary Datasheet
RJK60S3DPE
600V - 12A - SJ MOS FET
High Speed Power Switching
R07DS0732EJ0200
Rev.2.00
Oct 12, 2012
Features
ï· Superjunction MOSFET
ï· Low on-resistance
RDS(on) = 0.35 ï typ. (at ID = 6 A, VGS = 10 V, Ta = 25ï°C)
ï· High speed switching
tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50 ï, Rg = 10 ï, Ta = 25ï°C)
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
D
4
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25ï°C
Tc = 100ï°C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Maximum duty cycle D = 0.75.
3. STch = 25ï°C, Tch ï£ 150ï°C
4. Value at Tc = 25ï°C
Symbol
VDSS
VGSS
ID Note1,2
ID Note1,2
ID
Note1
(pulse)
IDR Note1
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note4
ï±ch-c
Tch
Tstg
Ratings
600
+30, ï20
12.0
7.6
24
12
24
3
0.49
83.3
1.5
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
R07DS0732EJ0200 Rev.2.00
Oct 12, 2012
Page 1 of 7
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese