RJK60S2DPP-E0 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 600V - 8A - SJ MOS FET High Speed Power Switching

RJK60S2DPP-E0
600V - 8A - SJ MOS FET
High Speed Power Switching
Features
• Superjunction MOSFET
• Low on-resistance
R_DS(on) = 0.53 Ω typ. (at I_D = 4 A, V_GS = 10 V, Ta = 25°C)
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
1
23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Body-drain diode reverse drain current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Value at Tc = 25°C
G
Symbol
V_DSS
V_GSS
I_D ^Note1,2
I_DR ^Note1
Pch ^Note2
θch-c
Tch
Tstg
Preliminary Datasheet
R07DS0742EJ0001
Rev.0.01
Apr 23, 2012
D
1. Gate
2. Drain
3. Source
S
Ratings
600
+30, −20
8
8
26.3
4.75
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/W
°C
°C
R07DS0742EJ0001Rev.0.01
Apr 23, 2012
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