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| RJK60S2DPD Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 600V - 10A - SJ MOS FET High Speed Power Switching | |||
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RJK60S2DPD
600V - 10A - SJ MOS FET
High Speed Power Switching
Preliminary Datasheet
R07DS0741EJ0003
Rev.0.03
Nov 30, 2012
Features
ï· Superjunction MOSFET
ï· Low on-resistance
RDS(on) = 0.53 ï typ. (at ID = 4 A, VGS = 10 V, Ta = 25ï°C)
ï· High speed switching
tf = 33 ns typ. (at ID = 4 A, VGS = 10 V, RL = 75 ï, Rg = 10 ï, Ta = 25ï°C)
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
D
4
12 3
1. Gate
G
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25ï°C
Tc = 100ï°C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Maximum duty cycle D = 0.75
3. STch = 25ï°C, Tch ï£ 150ï°C
4. Value at Tc = 25ï°C
Symbol
VDSS
VGSS
ID Note1,2
ID Note1,2
ID
Note1
(pulse)
IDR Note1
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note4
ï±ch-c
Tch
Tstg
Ratings
600
+30, ï20
10
6.3
20
10
20
2
0.21
50
2.5
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
R07DS0741EJ0003 Rev.0.03
Nov 30, 2012
Page 1 of 6
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