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RJK6036DP3-A0 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 600V - 2A - MOS FET High Speed Power Switching | |||
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RJK6036DP3-A0
600V - 2A - MOS FET
High Speed Power Switching
Features
ï· Low on-resistance
RDS(on) = 5.7 ï typ. (at ID = 1 A, VGS = 10 V, Ta = 25ï°C)
ï· Low drive current
ï· High density mounting
Outline
RENESAS Package code: PRSP0004ZB-A
Package name: SOT-223
4
G
3
2
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
VGSS
ID Note1
ID
Note2
(pulse)
IDR Note1
IDR
Note2
(pulse)
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Limited Tch max.. Value at Tc = 25ï°C
2. Pulse width limited by safe operating area.
Preliminary Datasheet
R07DS0841EJ0100
Rev.1.00
Jul 05, 2011
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
600
±30
2
4
2
4
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
ï°C
ï°C
R07DS0841EJ0100 Rev.1.00
Jul 05, 2011
Page 1 of 3
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