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| RJK6034DPP-E0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 600V - 1A - MOS FET High Speed Power Switching | |||
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RJK6034DPP-E0
600V - 1A - MOS FET
High Speed Power Switching
Features
ï· Low on-resistance
RDS(on) = 9.8 ï typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25ï°C)
ï· Low leakage current
ï· High speed switching
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
G
1
23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
VDSS
VGSS
ID Note3
ID (pulse) Note1
IDR
IDR
Note1
(pulse)
Pch Note2
Channel to case thermal impedance
ï±ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area
2. Value at Tc = 25ï°C
3. STch = 25ï°C, Tch ï£ 150ï°C
Preliminary Datasheet
R07DS0615EJ0100
Rev.1.00
Feb 12, 2013
D
1. Gate
2. Drain
3. Source
S
Ratings
600
ï±30
1
2
1
2
21.1
5.92
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
ï°C/W
ï°C
ï°C
R07DS0615EJ0100 Rev.1.00
Feb 12, 2013
Page 1 of 6
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