 English |
|
|
|
|
|
|
|
| RJK6034DPD-E0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 600 V - 1 A - MOS FET High Speed Power Switching | |||
| |||
|
RJK6034DPD-E0
600 V - 1 A - MOS FET
High Speed Power Switching
Features
ï· Low on-resistance
RDS(on) = 9.8 ï typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25ï°C)
ï· Low leakage current
ï· High speed switching
Outline
RENESAS Package code: PRSS0004ZJ-A
(Package name : TO-252)
4
G
12 3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Channel dissipation
VDSS
VGSS
ID
ID
Note1
(pulse)
IAP Note3
Pch Note2
Channel to case thermal impedance
ï±ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area
2. Value at Tc = 25ï°C
3. STch = 25ï°C, Tch ï£ 150ï°C
Preliminary Datasheet
R07DS0553EJ0100
Rev.1.00
Oct 13, 2011
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
600
ï±30
1
2
1
36.7
3.4
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
ï°C/W
ï°C
ï°C
R07DS0553EJ0100 Rev.1.00
Oct 13, 2011
Page 1 of 6
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese