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| RJK6032DPD_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 600V - 3A - MOS FET High Speed Power Switching | |||
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RJK6032DPD
600V - 3A - MOS FET
High Speed Power Switching
Features
ï· Low on-resistance
RDS(on) = 3.3 ï typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25ï°C)
ï· Low drive current
ï· High density mounting
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
G
12 3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by operating area.
2. STch = 25ï°C, Tch ï£ 150ï°C
3. Value at Tc = 25ï°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAP Note2
EAR Note2
Pch Note3
ï±ch-c
Tch
Tstg
Preliminary Datasheet
R07DS0837EJ0300
Rev.3.00
Oct 05, 2012
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
600
ï±30
3
6
3
6
3
0.49
40.3
3.1
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJï
W
ï°C/W
ï°C
ï°C
R07DS0837EJ0300 Rev.3.00
Oct 05, 2012
Page 1 of 6
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