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| RJK6029DJA_10 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching | |||
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RJK6029DJA
Silicon N Channel MOS FET
High Speed Power Switching
Features
ï· Low on-resistance
RDS(on) = 13.5 ï typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25ï°C)
ï· Low drive current
ï· High density mounting
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92(1))
G
321
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
Pch
ï±ch-a
Tch
Tstg
Preliminary Datasheet
REJ03G1895-0100
Rev.1.00
Jun 18, 2010
D
1. Source
2. Drain
3. Gate
S
Ratings
600
±30
0.2
0.8
0.2
0.8
0.75
166.7
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
ï°C/W
ï°C
ï°C
REJ03G1895-0100 Rev.1.00
Jun 18, 2010
Page 1 of 6
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