RJK6018DPM Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJK6018DPM
Silicon N Channel MOS FET
High Speed Power Switching
Features
 Low on-resistance
R_DS(on) = 0.2  typ. (at I_D = 15 A, V_GS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
G
Preliminary Datasheet
R07DS0131EJ0100
Rev.1.00
Sep 09, 2010
D
1. Gate
2. Drain
3. Source
1
2
3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
V_DSS
V_GSS
I_DNote4
I_D
Note1
(pulse)
I_DR
I_DR
Note1
(pulse)
I_APNote3
E_ARNote3
Pch ^Note2
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
4. Limited by maximum safe operation area
S
Ratings
600
±30
30
90
30
90
6
1.9
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0131EJ0100 Rev.1.00
Sep 09, 2010
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