RJK6012DPP_10 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJK6012DPP
Silicon N Channel MOS FET
High Speed Power Switching
Features
 Low on-resistance
R_DS(on) = 0.77  typ. (at I_D = 5 A, V_GS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
G
1
23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
Drain current
Drain peak current
V_GSS
I_D ^Note4
I_D
Note1
(pulse)
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
I_DR
I_{DR (pulse)} ^Note1
I_AP ^Note3
E_AR ^Note3
Pch ^Note2
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
4. Limited by maximum safe operation area
Preliminary Datasheet
REJ03G1581-0200
Rev.2.00
Jun 30, 2010
D
1. Gate
2. Drain
3. Source
S
Ratings
600
30
10
20
10
20
3
0.49
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
REJ03G1581-0200 Rev.2.00
Jun 30, 2010
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