|
RJK6006DPD_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching | |||
|
RJK6006DPD
Silicon N Channel MOS FET
High Speed Power Switching
Features
ï· Low on-state resistance
RDS(on) = 1.4 ï typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25ï°C)
ï· High speed switching
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
G
12 3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW ï£10 ïs, duty cycle ï£ 1%
2. Value at Tc = 25ï°C
3. STch = 25ï°C, Tch ï£ 150ï°C
4. Limited by maximum safe operation area
Symbol
VDSS
VGSS
ID Note4
ID (pulse) Note1
IDR
IDR (pulse) Note1
IAPNote3
EARNote3
Pch Note 2
ï±ch-c
Tch
Tstg
Preliminary Datasheet
REJ03G1935-0100
Rev.1.00
Jun 01, 2010
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
600
ï±30
5
15
5
15
5
2
77.6
1.61
150
â55 to +150
(Ta = 25ï°C)
Unit
V
V
A
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
REJ03G1935-0100 Rev.1.00
Jun 01, 2010
Page 1 of 6
|
▷ |