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| RJK6002DJE_15 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 600V - 2A - MOS FET High Speed Power Switching | |||
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RJK6002DJE
600V - 2A - MOS FET
High Speed Power Switching
Features
ï· Low on-resistance
RDS(on) = 5.7 ï typ. (at ID = 1 A, VGS = 10 V, Ta = 25ï°C)
ï· Low leakage current
ï· High speed switching
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
G
321
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
VGSS
ID Note1
ID
Note3
(pulse)
IDR Note1
IDR
Note3
(pulse)
Pch Note2
Channel to ambient thermal impedance
ï±ch-a
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Limited by Tch max.
2. Value at Tc = 25ï°C
3. Pulse width limited by safe operating area.
Preliminary Datasheet
R07DS0845EJ0100
Rev.1.00
Jul 05, 2011
D
1. Source
2. Drain
3. Gate
S
Ratings
600
ï±30
2
4
2
4
0.9
139
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
ï°C/W
ï°C
ï°C
R07DS0845EJ0100 Rev.1.00
Jul 05, 2011
Page 1 of 3
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