RJK5036DP3-A0 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 500V - 2.4A - MOS FET High Speed Power Switching

RJK5036DP3-A0
500V - 2.4A - MOS FET
High Speed Power Switching
Features
 Low on-resistance
R_DS(on) = 3.83  typ. (at I_D = 1.2 A, V_GS = 10 V, Ta = 25C)
 Low drive current
 High density mounting
Outline
RENESAS Package code: PRSP0004ZB-A
Package name: SOT-223
4
G
3
2
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
V_GSS
I_DNote1
I_D
Note2
(pulse)
I_DR ^Note1
I_DR
Note2
(pulse)
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Limited Tch max.. Value at Tc = 25C
2. Pulse width limited by safe operating area.
Preliminary Datasheet
R07DS0840EJ0100
Rev.1.00
Jul 05, 2011
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
500
±30
2.4
4.8
2.4
4.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
C
C
R07DS0840EJ0100 Rev.1.00
Jul 05, 2011
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