RJK5032DPH-E0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 500V - 3A - MOS FET High Speed Power Switching

RJK5032DPH-E0
500V - 3A - MOS FET
High Speed Power Switching
Features
 Low on-state resistance
R_DS(on) = 2.1  typ. (at I_D = 1.5 A, V_GS = 10 V, Ta = 25C)
 Low drive current
 High speed switching
Outline
RENESAS Package code: PRSS0004ZJ-B
(Package name: TO-251)
4
G
12 ₃
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current
Drain peak current
I_D
I_{D (pulse)} ^Note1
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
I_DR
I_DR
Note1
(pulse)
I_AP ^Note2
E_AR ^Note2
Pch ^{Note 3}
Channel to case thermal Impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. STch = 25C, Tch  150C
3. Value at Tc = 25C
Preliminary Datasheet
R07DS1039EJ0100
Rev.1.00
Mar 15, 2013
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
500
30
3
6
3
6
3
0.5
40.3
3.1
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS1039EJ0100 Rev.1.00
Mar 15, 2013
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