RJK5030DPP-M0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJK5030DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
Features
 Low on-state resistance
R_DS(on) = 1.3  typ. (at I_D = 2 A, V_GS = 10 V, Ta = 25C)
 High speed switching
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
G
1
23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Channel dissipation
V_DSS
V_GSS
I_D
I_{D (pulse)} ^Note1
I_APNote3
Pch ^{Note 2}
Channel to case thermal Impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
Preliminary Datasheet
R07DS0227EJ0100
Rev.1.00
Dec 14, 2010
D
1. Gate
2. Drain
3. Source
S
Value
500
30
5
20
5
28.5
4.38
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
W
C/W
C
C
R07DS0227EJ0100 Rev.1.00
Dec 14, 2010
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