RJK5026DPE Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJK5026DPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_DR
I_DR
Note1
(pulse)
I_APNote3
E_ARNote3
Pch ^Note2
θch-c
Tch
Tstg
REJ03G1852-0100
Rev.1.00
Oct 26, 2009
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
500
±30
6
18
6
18
4
0.88
62.5
2
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1852-0100 Rev.1.00 Oct 26, 2009
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