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| RJK5012DPE_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching | |||
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RJK5012DPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
ï· Low on-resistance
RDS(on) = 0.515 ï typ. (at ID = 6 A, VGS = 10 V, Ta = 25 ï°C)
ï· Low leakage current
ï· High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tc = 25ï°C
3. STch = 25ï°C, Tch ï£ 150ï°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
ï±ch-c
Tch
Tstg
Preliminary Datasheet
REJ03G1487-0300
Rev.3.00
May 12, 2010
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
500
ï±30
12
24
12
24
4
0.88
100
1.25
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
REJ03G1487-0300 Rev.3.00
May 12, 2010
Page 1 of 6
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