RJK5003DPD_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching Use

Preliminary Datasheet
RJK5003DPD
Silicon N Channel Power MOS FET
High Speed Power Switching Use
R07DS0049EJ0400
(Previous: REJ03G0580-0300)
Rev.4.00
Jul 22, 2010
Features
 V_DSS : 500 V
 R_DS(on) : 1.5  (MAX.)
 I_D : 5 A
 Surface mount package (MP-3A)
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
2, 4
ommesnidgn _Applications
c ^e _{ Lighting ballast, SMPS, etc.}
re ^d _{Maximum Ratings}
ot ^{ew Parameter}
n _{Drain to source voltage}
N _{Gate to source voltage}
r _{Drain current}
fo ^{Drain Peak current}
4
12 ₃
1
3
1. Gate
2. Drain
3. Source
4. Drain
Symbol
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
Ratings
500
30
5
20
(Tc = 25°C)
Unit
Conditions
V
V_GS = 0 V
V
V_DS = 0 V
A
A
Avalanche current
I_AP
5
A
L = 200 H
Channel dissipation
Pch
62.5
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
–55 to +150
C
Channel to case thermal impedance
_ch-c
2.0
Note: 1. Pulse width limited by safe operating area.
C/W Channel to case
R07DS0049EJ0400 Rev.4.00
Jul 22, 2010
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