RJK5003DPD Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching Use

RJK5003DPD
Silicon N Channel Power MOS FET
High Speed Power Switching Use
Features
• V_DSS : 500 V
• R_DS(on) : 1.5 Ω (MAX.)
• I_D : 5 A
• Surface mount package (MP-3A)
Outline
RENESAS Package code: PRSS0004ZA-A
(Package name : MP-3A)
2, 4
4
1
12 ₃
3
REJ03G0580-0200
Rev.2.00
Mar 14, 2006
1. Gate
2. Drain
3. Source
4. Drain
Applications
• Lighting ballast, SMPS, etc.
Maximum Ratings
Parameter
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain Peak current
Avalanche current
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_AP
Channel dissipation
Pch
Channel temperature
Tch
Storage temperature
Tstg
Channel to case thermal impedance
θ_ch-c
Note: 1. Pulse width limited by safe operating area.
Ratings
500
±30
5
20
5
62.5
150
–55 to +150
2.0
Unit
V
V
A
A
A
W
°C
°C
°C/W
(Tc = 25°C)
Conditions
V_GS = 0 V
V_DS = 0 V
L = 200 µH
Channel to case
Rev.2.00, Mar 14, 2006, page 1 of 6