RJK4513DPE Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJK4513DPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.33 Ω typ. (at I_D = 8 A, V_GS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_DR
I_DR
Note1
(pulse)
I_APNote3
E_ARNote3
Pch ^Note2
θch-c
Tch
Tstg
REJ03G1586-0100
Rev.1.00
Dec 08, 2009
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
450
±30
16
48
16
48
4
0.9
100
1.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1586-0100 Rev.1.00 Dec 08, 2009
Page 1 of 3