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| RJK4502DPD_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 450V - 2.8A - MOS FET High Speed Power Switching | |||
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RJK4502DPD
450V - 2.8A - MOS FET
High Speed Power Switching
Features
ï· Low on-state resistance
RDS(on) = 3 ï typ. (at ID = 1.4 A, VGS = 10 V, Ta = 25ï°C)
ï· High speed switching
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
G
12 3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
VGSS
ID Note1
ID(pulse) Note2
IDR Note1
IDR(pulse) Note2
IAP Note3
Pch Note4
Channel to case thermal Impedance
ï±ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Limited by Tch max.
2. Pulse width limited by safe operating area.
2. STch = 25ï°C, Tch ï£ 150ï°C
4. Value at Tc = 25ï°C
Preliminary Datasheet
R07DS0865EJ0100
Rev.1.00
Aug 08, 2012
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
450
ï±30
2.8
5.6
2.8
5.6
2.8
30
4.17
150
â55 to +150
(Ta = 25ï°C)
Unit
V
V
A
A
Aï
Aï
Aï
W
ï°C/W
ï°C
ï°C
R07DS0865EJ0100 Rev.1.00
Aug 08, 2012
Page 1 of 6
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