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RJK4034DJE Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 400V - 1.6A - MOS FET High Speed Power Switching
RJK4034DJE
400V - 1.6A - MOS FET
High Speed Power Switching
Features
 Low on-state resistance
RDS(on) = 3.7  typ. (at ID = 0.8 A, VGS = 10 V, Ta = 25C)
 Low drive current
 High speed switching
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
G
321
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
VGSS
ID Note1
ID(pulse) Note2
IDR Note1
IDR(pulse)Note2
Pch Note 3
Channel to ambient thermal Impedance
ch-a
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Limited by Tch max.
2. Pulse width limited by safe operating area.
3. Value at Tc = 25C
Preliminary Datasheet
R07DS0864EJ0100
Rev.1.00
Aug 10, 2012
D
1. Source
2. Drain
3. Gate
S
Value
400
30
1.6
3.2
1.6
3.2
0.9
139
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
W
C/W
C
C
R07DS0864EJ0100 Rev.1.00
Aug 10, 2012
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