RJK4002DPD Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 400V - 3A - MOS FET High Speed Power Switching

RJK4002DPD
400V - 3A - MOS FET
High Speed Power Switching
Features
• Low on-state resistance
R_DS(on) = 2.4 Ω typ. (at I_D = 1.5 A, V_GS = 10 V, Ta = 25°C)
• Low drive current
• High speed switching
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
G
12 ₃
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
V_DSS
V_GSS
I_D
I_{D (pulse)} ^Note1
I_DR
I_DR
Note1
(pulse)
I_AP ^Note2
E_AR ^Note2
Pch ^Note3
Channel to case thermal Impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. STch = 25°C, Tch ≤ 150°C
3. Value at Tc = 25°C
Preliminary Datasheet
R07DS0835EJ0210
Rev.2.10
Jan 29, 2014
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
400
±30
3
6
3
6
2.5
0.357
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS0835EJ0210 Rev.2.10
Jan 29, 2014
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