RJK4002DJE_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 400V - 3A - MOS FET High Speed Power Switching

RJK4002DJE
400V - 3A - MOS FET
High Speed Power Switching
Features
 Low on-state resistance
R_DS(on) = 2.4  typ. (at I_D = 1.5 A, V_GS = 10 V, Ta = 25C)
 High speed switching
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
G
321
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
V_DSS
V_GSS
I_D ^Note1
I_D(pulse) ^Note4
I_DR ^Note1
I_DR(pulse) ^Note4
I_APNote3
E_ARNote3
Pch ^{Note 2}
Channel to ambient thermal Impedance
ch-a
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Limited by Tch max.
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
4. Pulse width limited by safe operating area.
Preliminary Datasheet
R07DS0842EJ0200
Rev.2.00
Aug 03, 2012
D
1. Source
2. Drain
3. Gate
S
Value
400
30
3
6
3
6
2.5
0.357
2.54
49.2
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0842EJ0200 Rev.2.00
Aug 03, 2012
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