 English |
|
|
|
|
|
|
|
| RJK2576DPA Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 250V - 17A - MOS FET High Speed Power Switching | |||
| |||
|
RJK2576DPA
250V - 17A - MOS FET
High Speed Power Switching
Features
ï· Low on-resistance
RDS(on) = 0.102 ï typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25ï°C)
ï· Very low gate charge
Qg = 18 nC typ. (VDD = 200 V, VGS = 10 V, ID = 17 A, Ta = 25ï°C)
ï· Low leakage current
ï· High speed switching
Outline
Preliminary Datasheet
R07DS0860EJ0200
Rev.2.00
Feb 05, 2013
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5 678
5 678
D DDD
4
4 32 1
G
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID Note4
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote2
EARNote2
Pch Note3
Channel to case thermal impedance
ï±ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. STch = 25ï°C, Tch ï£ 150ï°C
3. Value at Tc = 25ï°C
4. Limited by maximum safe operation area
Ratings
250
±30
17
34
17
34
7
3
65
1.93
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
R07DS0860EJ0200 Rev.2.00
Feb 27, 2013
Page 1 of 3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese