RJK2575DPA Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 250V - 17A - MOS FET High Speed Power Switching

RJK2575DPA
250V - 17A - MOS FET
High Speed Power Switching
Features
 Low on-resistance
R_DS(on) = 0.083  typ. (at I_D = 8.5 A, V_GS = 10 V, Ta = 25 C)
 Low leakage current
 High speed switching
Outline
Preliminary Datasheet
R07DS0857EJ0200
Rev.2.00
Jan 09, 2013
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5 ⁶⁷⁸
5 678
D DDD
4
4 32 1
G
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
Symbol
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_DR
I_DR
Note1
(pulse)
I_APNote3
E_ARNote3
Pch ^Note2
ch-c
Tch
Tstg
Ratings
250
±30
17
34
17
34
7
3.0
65
1.93
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0857EJ0200 Rev.2.00
Jan 09, 2013
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