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RJK2511DPK_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching | |||
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RJK2511DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
ï· Low on-resistance
ï· Low leakage current
ï· High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
Preliminary Datasheet
REJ03G1486-0500
Rev.5.00
Jun 30, 2010
D
1
2
3
G
S
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tc = 25ï°C
3. STch = 25ï°C, Tch ï£ 150ï°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
ï±ch-c
Tch
Tstg
Ratings
250
ï±30
65
200
65
200
22
30.2
200
0.625
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
REJ03G1486-0500 Rev.5.00
Jun 30, 2010
Page 1 of 6
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